5秒后页面跳转
IXFR180N15P PDF预览

IXFR180N15P

更新时间: 2024-11-03 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 220K
描述
功能与特色: 优点: 应用:

IXFR180N15P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:4.95其他特性:AVALANCHE RATED, UL RECOGNIZED
雪崩能效等级(Eas):4000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):100 A最大漏源导通电阻:0.013 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):380 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

IXFR180N15P 数据手册

 浏览型号IXFR180N15P的Datasheet PDF文件第2页浏览型号IXFR180N15P的Datasheet PDF文件第3页浏览型号IXFR180N15P的Datasheet PDF文件第4页浏览型号IXFR180N15P的Datasheet PDF文件第5页浏览型号IXFR180N15P的Datasheet PDF文件第6页 
PolarHVTM HiPerFET  
Power MOSFET  
IXFR 180N15P VDSS  
ID25  
= 150 V  
= 100 A  
RDS(on) 13 mΩ  
200 ns  
ISOPLUS247TM  
trr  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 175° C  
150  
150  
V
TJ = 25° C to 175° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
TAB  
S
ID25  
TC =25° C  
100  
A
ID(RMS)  
IDM  
External Lead current limit  
75  
A
A
G = Gate  
S = Source  
D = Drain  
TC = 25° C, pulse width limited by TJM  
380  
IAR  
TC =25° C  
60  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
100  
4
mJ  
J
Features  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
10  
V/ns  
l
International standard isolated  
package  
UL recognized package  
TC = 25° C  
300  
W
l
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
l
Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
TL  
1.6 mm (0.062 in.) from case for 10 s  
50/60 Hz, RMS, 1 minute  
300  
°C  
l
l
l
VISOL  
2500  
V~  
Fd  
Mounting force  
20..120 / 4.5..26  
5
N/lb  
g
Weight  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
Easy to mount  
Space savings  
High power density  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
VDS = VDSS, VGS = 0 V  
150  
V
V
l
l
2.5  
5.0  
100  
25  
nA  
µA  
IDSS  
TJ = 150° C  
1.5 mA  
RDS(on)  
VGS = 10 V, ID = IT , Note 1  
13 mΩ  
DS99242(01/06)  
© 2006 IXYS All rights reserved  

与IXFR180N15P相关器件

型号 品牌 获取价格 描述 数据表
IXFR1810 IXYS

获取价格

Power Field-Effect Transistor, 24A I(D), 500V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IXFR18N90P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFR18N90P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFR200N10P IXYS

获取价格

PolarTM HiPerFET Power MOSFET
IXFR200N10P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFR200N10P_06 IXYS

获取价格

Polar HiPerFET Power MOSFET
IXFR20N100P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFR20N100P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFR20N120P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFR20N120P LITTELFUSE

获取价格

功能与特色: 优点: 应用: