Datasheet > IXFR20N80P

IXFR20N80P

更新时间： 2024-09-16 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	200K
描述
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中文翻译

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数据手册

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IXFR20N80P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFC 20N80P

IXFR 20N80P

V_DSS= 800

I_D25= 10

R_DS(on)≤ 500 mΩ

≤ 250 ns

Electrically Isolated Back Surface

t_rr

N-Channel Enhancement Mode

Fast Recovery Diode

Avalanche Rated

Symbol

Test Conditions

Maximum Ratings

ISOPLUS220^TM(IXFC)

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

800

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GSS

V_GSM

Continuous

Transient

Isolated back surface

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

I_AR

T_C= 25°C

ISOPLUS247^TM(IXFR)

E153432

E_AR

E_AS

1.0

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 3 Ω

V/ns

T_C= 25°C

166

Isolated back surface

D = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

S = Source

T_L

1.6 mm (0.062 in.) from case for 10 s

50/60 Hz, RMS, t = 1minute, leads-to-tab

300

°C

Features

^zSilicon chip on Direct-Copper-Bond

V_ISOL

F_C

2500

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

^zLow drain to tab capacitance(<30pF)

Mounting Force

(IXFC)

(IXFR)

11..65 / 2.5..15

20..120 / 4.5..25

N/lb

Weight

ISOPLUS220

ISOPLUS247

Applications

DC-DC converters

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

Battery chargers

Switched-mode and resonant-mode

power supplies

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

V_DS= V_GS, I_D= 4 mA

V_GS= 30 V, V_DS= 0 V

800

3.0

5.0

DC choppers

^zAC motor control

100

I_DSS

V_DS= V_DSS

V_GS= 0 V

μA

Advantages

T_J= 125°C

Easy assembly

Space savings

R_DS(on)

V_GS= 10 V, I_D= 10 A

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

500 mΩ

High power density

DS99602E(08/06)

12 3 4 5

中文翻译

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