Datasheet > IXFR24N100

IXFR24N100

更新时间： 2024-09-14 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	189K
描述
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中文翻译

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数据手册

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IXFR24N100 数据手册

HiPerFET^TMPower

MOSFET

V_DSS= 1000V

I_D25= 22A

R_DS(on)≤ 390mΩ

IXFR24N100

ISOPLUS247^TM

t_rr

≤ 250ns

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Avalanche Rated

ISOPLUS247

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

Isolated Tab

I_A

T_C= 25°C

E_AS

G = Gate

D = Drain

S = Source

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

416

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

• Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

• Low drain to tab capacitance(<30pF)

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Avalanche rated

V_ISOL

50/60 Hz, RMS

t = 1min

t = 1s

2500

3000

I_ISOL≤ 1mA

M_d

Mounting force

20..120 / 4.5..27

N/lb.

^l• Fast intrinsic Rectifier

Weight

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, unless otherwise specified)

• AC motor drives

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20V, V_DS= 0V

1000

3.0

Advantages

5.5

• Easy assembly

• Space savings

• High power density

±200 nA

I_DSS

V_DS= V_DSS

V_GS= 0V

100 μA

2 mA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 12A, Note 1

390 mΩ

DS98599C(10/08)

12 3 4 5

中文翻译

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