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IXFR180N085 PDF预览

IXFR180N085

更新时间: 2024-11-02 11:14:03
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IXYS /
页数 文件大小 规格书
2页 39K
描述
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)

IXFR180N085 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
其他特性:AVALANCHE RATED雪崩能效等级(Eas):3000 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:85 V最大漏极电流 (Abs) (ID):180 A
最大漏极电流 (ID):180 A最大漏源导通电阻:0.007 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):400 W最大脉冲漏极电流 (IDM):720 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFR180N085 数据手册

 浏览型号IXFR180N085的Datasheet PDF文件第2页 
HiPerFETTM Power MOSFETs  
ISOPLUS247TM  
(Electrically Isolated Back Surface)  
IXFR 180N085 VDSS = 85 V  
ID25 = 180 A  
RDS(on)  
=
7 mW  
trr £ 250 ns  
Single MOSFET Die  
Preliminary data sheet  
ISOPLUS 247TM  
Symbol  
TestConditions  
MaximumRatings  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
85  
85  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
ID25  
ID(RMS)  
IDM  
TC = 25°C (MOSFET chip capability)  
Externalleadcurrentlimit  
TC = 25°C, Note 1  
180  
76  
720  
180  
A
A
A
A
Isolated back surface*  
D = Drain  
IAR  
TC = 25°C  
G = Gate  
S = Source  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
3
mJ  
J
*Patentpending  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
Features  
PD  
TJ  
TC = 25°C  
400  
W
• SiliconchiponDirect-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electricalisolation  
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
2500  
5
°C  
V~  
g
• Low drain to tab capacitance(<25pF)  
• Low R  
HDMOSTM process  
• RuggeDdSp(oon)lysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
VISOL  
Weight  
50/60 Hz, RMS  
t = 1 min  
• Fast intrinsic Rectifier  
Applications  
Symbol  
VDSS  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• DC-DC converters  
• Battery chargers  
• Switched-modeandresonant-mode  
powersupplies  
• DC choppers  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8mA  
85  
V
VGS(th)  
IGSS  
2.0  
4.0  
V
• AC motor control  
VGS = ±20 V, VDS = 0  
±100  
nA  
IDS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100  
2
mA  
mA  
Advantages  
• Easy assembly  
• Space savings  
• High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Note 1  
7
mW  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98638(7/99)  
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