Datasheet > IXFR180N10

IXFR180N10

更新时间： 2024-11-19 14:56:19

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力特 - LITTELFUSE		/
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数据手册

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IXFR180N10 数据手册

HiPerFET^TMPower MOSFETs

ISOPLUS247^TM

IXFR 180N10 V_DSS= 100 V

I_D25= 165 A

(Electrically Isolated Back Surface)

R_DS(on)

8 mW

t_rr£ 250 ns

Single MOSFET Die

Preliminary data

Symbol

TestConditions

MaximumRatings

ISOPLUS 247^TM

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

100

V_GS

V_GSM

Continuous

Transient

±20

±30

Isolated back surface*

D = Drain

I_D25

I_D(RMS)

I_DM

T_C= 25°C (MOSFET chip capability)

Externallead(currentlimit)

T_C= 25°C, Note 1

165

720

180

G = Gate

S = Source

I_AR

T_C= 25°C

E_AR

E_AS

T_C= 25°C

*Patentpending

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

Features

P_D

T_C= 25°C

400

• SiliconchiponDirect-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electricalisolation

• Low drain to tab capacitance(<25pF)

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

1.6 mm (0.063 in.) from case for 10 s

300

2500

°C

V_ISOL

Weight

50/60 Hz, RMS

t = 1 min

• Fast intrinsic Rectifier

Applications

Symbol

V_DSS

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• DC-DC converters

• Battery chargers

• Switched-modeandresonant-mode

powersupplies

• DC choppers

• AC motor control

V_GS= 0 V, I_D= 3mA

100

2.0

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 8mA

4.0 V

V_GS= ±20 V, V_DS= 0

±100nA

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

100 mA

2 mA

• Easy assembly

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= 90A

Note 1

8 mW

IXYS reserves the right to change limits, test conditions, and dimensions.

98584A(7/00)

1 - 2

12 3

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