Datasheet > IXFR24N100

IXFR24N100

更新时间： 2024-09-24 03:14:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	36K
描述
HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface)

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IXFR24N100 数据手册

Advanced Technical Information

HiPerFET^TMPower MOSFETs

IXFR 24N100 V_DSS= 1000 V

ISOPLUS247^TM

I_D25

22 A

(Electrically Isolated Back Surface)

R_DS(on)= 0.39 W

t_rr£ 250 ns

Single MOSFET Die

ISOPLUS 247^TM

Symbol

TestConditions

MaximumRatings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

1000

V_GS

V_GSM

Continuous

Transient

±20

±30

Isolated back surface*

D = Drain

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, Note 1

T_C= 25°C

G = Gate

S = Source

E_AR

E_AS

T_C= 25°C

*Patentpending

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

P_D

T_C= 25°C

400

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

• SiliconchiponDirect-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electricalisolation

• Low drain to tab capacitance(<30pF)

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

T_L

1.6 mm (0.063 in.) from case for 10 s

300

2500

°C

V_ISOL

Weight

50/60 Hz, RMS

t = 1 min

• Fast intrinsic Rectifier

Applications

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• DC-DC converters

• Battery chargers

• Switched-modeandresonant-mode

powersupplies

• DC choppers

• AC motor control

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20 V, V_DS= 0

1000

2.5

5.0 V

±100nA

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

100 mA

2 mA

Advantages

• Easy assembly

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= 24A

Note 1

0.39 W

IXYS reserves the right to change limits, test conditions, and dimensions.

98599(3/99)

1 - 2

中文翻译

下载PDF

IXFR24N100 替代型号

型号	品牌	替代类型	描述	数据表
IXFN26N100P	IXYS	功能相似	Polar Power MOSFET HiPerFET

与IXFR24N100相关器件

型号	品牌	获取价格	描述	数据表
IXFR24N100_08	IXYS	获取价格	HiPerFET Power MOSFET ISOPLUS247
IXFR24N100Q3	IXYS	获取价格	Power Field-Effect Transistor, 18A I(D), 1000V, 0.49ohm, 1-Element, N-Channel, Silicon, Me
IXFR24N100Q3	LITTELFUSE	获取价格	Q3级系列功率MOSFET为最终用户提供具有一流功率开关性能、出色热特性、强大器件耐用性和
IXFR24N50	IXYS	获取价格	HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)
IXFR24N50	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFR24N50Q	IXYS	获取价格	HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)
IXFR24N80P	IXYS	获取价格	PolarHV HiPerFET Power MOSFET
IXFR24N80P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFR24N90P	IXYS	获取价格	Polar Power MOSFET HiPerFET
IXFR24N90P	LITTELFUSE	获取价格	功能与特色: 优点: 应用: