Datasheet > IXFR32N100P

IXFR32N100P

更新时间： 2024-09-29 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	136K
描述
功能与特色: 优点: 应用:

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中文翻译

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数据手册

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IXFR32N100P 数据手册

Polar^TMPower MOSFET

HiPerFET^TM

V_DSS= 1000V

I_D25= 18A

R_DS(on)≤ 340mΩ

≤ 300ns

IXFR32N100P

t_rr

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

V_DSS

Test Conditions

Maximum Ratings

ISOPLUS247 (IXFR)

E153432

T_J= 25°C to 150°C

1000

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

I_D25

I_DM

T_C= 25°C

Isolated Tab

T_C= 25°C, pulse width limited by T_JM

I_AR

T_C= 25°C

E_AS

1.5

G = Gate

D = Drain

S = Source

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

320

Features

T_J

-55 ... +150

150

°C

T_JM

T_stg

• Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

-55 ... +150

T_L

Maximum lead temperature for soldering

Plastic body for 10s

300

260

°C

• Low drain to tab capacitance(<30pF)

T_SOLD

V_ISOL

F_C

• Low R

HDMOS^TMprocess

• Rugge^Dd^Sp^(ono⁾lysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

50/60 Hz, RMS, 1 minute

Mounting force

2500

20..120/4.5..27

N/lb.

• F^raa^ts^et^dintrinsic Rectifier

Weight

Applications

• Switched-mode and resonant-mode

power supplies

• DC-DC converters

Symbol

Test Conditions

Characteristic Values

• Laser Drivers

(T_J= 25°C, unless otherwise specified)

Min.

Typ. Max.

• AC and DC motor controls

• Robotics and servo controls

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

V_GS= ± 30V, V_DS= 0V

1000

3.5

Advantages

6.5

• Easy assembly

• Space savings

• High power density

± 200 nA

I_DSS

V_DS= V_DSS

V_GS= 0V

50 μA

2.5 mA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 16A, Note 1

340 mΩ

DS99881A(4/08)

12 3 4 5

中文翻译

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