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IXFR102N30P PDF预览

IXFR102N30P

更新时间: 2024-11-19 14:56:39
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 219K
描述
功能与特色: 优点: 应用:

IXFR102N30P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.76Is Samacsys:N
其他特性:AVALANCHE RATED, UL RECOGNIZED雪崩能效等级(Eas):2500 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:300 V最大漏极电流 (ID):60 A
最大漏源导通电阻:0.036 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):250 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFR102N30P 数据手册

 浏览型号IXFR102N30P的Datasheet PDF文件第2页浏览型号IXFR102N30P的Datasheet PDF文件第3页浏览型号IXFR102N30P的Datasheet PDF文件第4页浏览型号IXFR102N30P的Datasheet PDF文件第5页浏览型号IXFR102N30P的Datasheet PDF文件第6页 
PolarHTTM HiPerFET  
Power MOSFET  
VDSS = 300 V  
ID25 = 60 A  
RDS(on) 36 mΩ  
IXFR 102N30P  
(Electrically Isolated Back Surface)  
trr  
200 ns  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
Avalanche Rated  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
TJ = 25° C to 150° C  
300  
300  
V
VDGR  
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
VGS  
Continuous  
Transient  
20  
30  
V
V
VGSM  
G
D
S
(Isolated Tab)  
ID25  
IDM  
TC =25° C  
60  
A
A
TC = 25° C, pulse width limited by TJM  
250  
IAR  
TC =25° C  
60  
A
G = Gate  
D = Drain  
S = Source  
EAR  
TC =25° C  
TC =25° C  
60  
2.5  
10  
mJ  
J
Features  
EAS  
l
Silicon chip on Direct-Copper-Bond  
substrate  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
V/ns  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
PD  
TC =25° C  
250  
W
l
l
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l
Low package inductance  
- easy to drive and to protect  
TL  
1.6 mm (0.062 in.) from case for 10 s  
50/60 Hz, RMS, 1 minute  
300  
°C  
V~  
VISOL  
2500  
FC  
Mounting force  
22..130/5..29  
5
N/lb  
g
Advantages  
Weight  
l
Easy to mount  
Space savings  
High power density  
l
Symbol  
Test Conditions  
Characteristic Values  
l
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
300  
V
V
2.5  
5.0  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 51 A  
36 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99247E(12/05)  
© 2006 IXYS All rights reserved  

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