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IXFR140N30P PDF预览

IXFR140N30P

更新时间: 2024-11-02 11:14:03
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IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
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描述
Polar Power MOSFET HiPerFET

IXFR140N30P 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:4.28Is Samacsys:N
其他特性:AVALANCHE RATED, UL RECOGNIZED雪崩能效等级(Eas):5000 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:300 V最大漏极电流 (Abs) (ID):70 A
最大漏极电流 (ID):70 A最大漏源导通电阻:0.026 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFR140N30P 数据手册

 浏览型号IXFR140N30P的Datasheet PDF文件第2页浏览型号IXFR140N30P的Datasheet PDF文件第3页浏览型号IXFR140N30P的Datasheet PDF文件第4页浏览型号IXFR140N30P的Datasheet PDF文件第5页 
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 300V  
ID25 = 70A  
RDS(on) 26mΩ  
IXFR140N30P  
trr  
200ns  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
ISOPLUS247 (IXFR)  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
300  
300  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
70  
A
A
Isolated Tab  
300  
IA  
TC = 25°C  
TC = 25°C  
70  
5
A
J
EAS  
G = Gate  
D = Drain  
S = Source  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
300  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
z UL recognized package  
z Silicon chip on Direct-Copper-Bond  
substrate  
VISOL  
50/60 Hz, RMS  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
IISOL 1mA  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Md  
Mounting force  
20..120 / 4.5..27  
5
N/lb.  
g
Weight  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
z
Fast intrinsic diode  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
z
Easy to mount  
Space savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20V, VDS = 0V  
300  
3.0  
V
z
z
High power density  
5.0  
V
±200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
25 μA  
1 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 70A, Note 1  
20  
26 mΩ  
DS99570F(5/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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