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IXFR14N100Q2 PDF预览

IXFR14N100Q2

更新时间: 2024-11-02 11:14:03
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 112K
描述
HiPerFET Power MOSFET Q2-Class

IXFR14N100Q2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:PLASTIC, ISOPLUS247, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.82
其他特性:AVALANCHE RATED, UL RECOGNIZED雪崩能效等级(Eas):2500 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (Abs) (ID):9.5 A
最大漏极电流 (ID):9.5 A最大漏源导通电阻:1.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):200 W
最大脉冲漏极电流 (IDM):56 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

IXFR14N100Q2 数据手册

 浏览型号IXFR14N100Q2的Datasheet PDF文件第2页浏览型号IXFR14N100Q2的Datasheet PDF文件第3页浏览型号IXFR14N100Q2的Datasheet PDF文件第4页 
HiPerFETTM  
Power MOSFET  
Q2-Class  
VDSS = 1000V  
ID25 = 9.5A  
RDS(on) 1.1Ω  
300ns  
IXFR14N100Q2  
trr  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
ISOPLUS247  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
ID25  
IDM  
TC = 25°C  
9.5  
56  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G = Gate  
S = Source  
D = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
14  
2.5  
A
J
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
Features  
200  
• Double Metal Process for Low Gate  
Resistance  
• International Standard Package  
• EpoxyMeetUL94V-0, Flammability  
Classification  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
• Low Rds(on), Low Qg  
• Avalanche Energy and Current Rated  
• Fast Intrinsic Recfifier  
TL  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
VISOL  
FC  
50/60 Hz, RMS, 1 minute  
Mounting Force  
2500  
V~  
Applications  
20..120/4.5..27  
N/lb.  
• DC-DC Converters  
• Switched-Mode and Resonant-Mode  
Power Supplies, >500kHz Switching  
• DC Choppers  
Weight  
5
g
• Pulse Generation  
• Laser Drivers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
VGS = ± 30V, VDS = 0V  
1000  
V
V
Advantages  
3.0  
5.5  
• Easy to Mount  
• Space Savings  
• High Power Density  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
25 μA  
1 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 7A, Note 1  
1.1  
Ω
DS99229B(04/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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