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IXFQ24N50P2 PDF预览

IXFQ24N50P2

更新时间: 2024-11-21 14:56:19
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力特 - LITTELFUSE /
页数 文件大小 规格书
6页 148K
描述
功能与特色: 优点: 应用:

IXFQ24N50P2 数据手册

 浏览型号IXFQ24N50P2的Datasheet PDF文件第2页浏览型号IXFQ24N50P2的Datasheet PDF文件第3页浏览型号IXFQ24N50P2的Datasheet PDF文件第4页浏览型号IXFQ24N50P2的Datasheet PDF文件第5页浏览型号IXFQ24N50P2的Datasheet PDF文件第6页 
Polar2TM HiperFETTM  
Power MOSFET  
VDSS = 500V  
ID25 = 24A  
RDS(on) 270mΩ  
IXFQ24N50P2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-3P  
Symbol  
Test Conditions  
Maximum Ratings  
G
D
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
S
Tab  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G = Gate  
S = Source  
D
= Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
24  
50  
A
A
Tab = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
12  
750  
A
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
15  
V/ns  
W
480  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
Fast Intrinsic Diode  
Dynamic dv/dt Rating  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
z
z
z
z
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque  
1.13/10  
5.5  
Nm/lb.in.  
g
Weight  
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
2.5  
Typ.  
Max.  
z
Switch-Mode and Resonant-Mode  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Power Supplies  
DC-DC Converters  
Battery Chargers  
Uninterrupted Power Supplies  
AC and DC Motor Drives  
High Speed Power Switching  
z
4.5  
z
± 100 nA  
z
z
IDSS  
25 μA  
1 mA  
z
TJ = 125°C  
Application  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
270 mΩ  
DS100271A(9/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

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