Datasheet > IXFN102N30P

IXFN102N30P

更新时间： 2024-11-18 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	91K
描述
PolarHV HiPerFET Power MOSFET

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中文翻译

获取价格

数据手册

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IXFN102N30P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

V_DSS= 300 V

I_D25= 86 A

R_DS(on)≤ 33 mΩ

t_rr≤ 200 ns

IXFN 102N30P

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

miniBLOC, SOT-227 B (IXFN)

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

300

V_GS

V_GSM

Continuous

Transient

I_D25

I_L

I_DM

T_C= 25°C

Lead Current Limit, RMS

T_C= 25°C, pulse width limited by T_JM

100

250

I_AR

E_AR

E_AS

T_C= 25°C

G = Gate

S = Source

D = Drain

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4 Ω

V/ns

T_C= 25°C

570

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

°C Features

^zInternational standard package

^zEncapsulating epoxy meets

UL94V-0, flammability classification

T_L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V_ISOL

50/60 Hz, RMS

t = 1 min

2500

3000

I_ISOL≤ 1 mA

t = 1 s

V~ ^zminiBLOC with Aluminium nitride

isolation

^zFast recovery diode

M_d

Mounting torque

Terminal connection torque

1.5 / 13 Nm/lb.in.

^zUnclamped Inductive Switching (UIS)

rated

Weight

^zLow package inductance

- easy to drive and to protect

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

Advantages

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

300

Easy to mount

Space savings

High power density

V_DS= V_GS, I_D= 4 mA

2.5

5.0

V_GS

20 V_DC, V_DS= 0

200

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

μA

T_J= 125°C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25,Note 1

33 mΩ

DS99248E(06/06)

12 3 4 5

中文翻译

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