Datasheet > IXFN120N20

IXFN120N20

更新时间： 2024-11-06 14:56:19

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力特 - LITTELFUSE		/
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中文翻译

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数据手册

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IXFN120N20 数据手册

HiPerFET^TM

Power MOSFETs

Single MOSFET Die

IXFN 120N20

V_DSS= 200 V

I_D25= 120 A

R_DS(on)= 17 mΩ

N-ChannelEnhancementMode

AvalancheRated, Highdv/dt, Lowt_rr

t_rr≤ 250 ns

miniBLOC,SOT-227B(IXFN)

E153432

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

200

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

120

480

120

E_AR

E_AS

T_C= 25°C

G = Gate

D = Drain

S = Source

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

P_D

T_J

T_C= 25°C

600

Features

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• International standard package

• miniBLOC, with Aluminium nitride

isolation

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

T_L

1.6 mm (0.063 in.) from case for 10 s

°C

V_ISOL

50/60 Hz, RMS

_ISOL≤ 1 mA

t = 1 min

t = 1 s

2500

3000

M_d

Mounting torque

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_DSS

V_GS= 0 V, I_D= 3mA

200

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 8mA

V_GS= ±20 V, V_DS= 0

4 V

• Temperature and lighting controls

• Low voltage relays

±200 nA

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

100 µA

2 mA

• Easy to mount

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Note 1

17 mΩ

DS96538D(03/03)

12 3 4 5

中文翻译

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