Datasheet > IXFH7N90Q_02

IXFH7N90Q_02

更新时间： 2024-11-05 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	138K
描述
HiPerFET Power MOSFETs Q-Class

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中文翻译

获取价格

数据手册

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IXFH7N90Q_02 数据手册

HiPerFET^TM

Power MOSFETs

Q-Class

IXFH 7N90Q V_DSS

IXFT 7N90Q I_D25

= 900 V

7 A

= 1.5 Ω

R_DS(on)

t_rr≤ 250 ns

N-ChannelEnhancementMode

AvalancheRated, LowQ_g,Highdv/dt

PreliminaryData

Symbol

TestConditions

Maximum Ratings

TO-247AD(IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

900

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C,

pulse width limited by T_JM

T_C= 25°C

TO-268 (D3) ( IXFT)

I_AR

700

E_AR

E_AS

dv/dt

T_C= 25°C

(TAB)

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

P_D

T_C= 25°C

180

G = Gate

= Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

S = Source

TAB = Drain

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting torque

300

°C

M_d

1.13/10

Nm/lb.in.

Features

Weight

TO-247

TO-268

IXYS advanced low Q_gprocess

Low gate charge and capacitances

- easier to drive

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

- faster switching

min.

typ.

max.

International standard packages

Low R_{DS (on)}

V_DSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 2.5 mA

900

Unclamped Inductive Switching (UIS)

rated

V_GS(th)

3.0

5.0

Molding epoxies meet UL 94 V-0

flammability classification

I_GSS

V_GS= ±20 V_DC, V_DS= 0

±100

Advantages

I_DSS

V_DS= 0.8 V_DSS

V_GS= 0 V

T = 25°C

T_J^J= 125°C

µA

Easy to mount

Space savings

R_DS(on)

= 10 V, I_D= 0.5 I_D25

1.5

Ω

P^Gu^Slse test, t ≤ 300 µs, duty cycle d ≤ 2 %

High power density

DS98645A(12/02)

中文翻译

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