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IXFH7N90Q_02 PDF预览

IXFH7N90Q_02

更新时间: 2024-11-18 11:14:03
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描述
HiPerFET Power MOSFETs Q-Class

IXFH7N90Q_02 数据手册

 浏览型号IXFH7N90Q_02的Datasheet PDF文件第2页 
HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFH 7N90Q VDSS  
IXFT 7N90Q ID25  
= 900 V  
7 A  
= 1.5 Ω  
=
RDS(on)  
trr 250 ns  
N-ChannelEnhancementMode  
AvalancheRated, LowQg,Highdv/dt  
PreliminaryData  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
900  
900  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C,  
7
28  
A
A
pulse width limited by TJM  
TC = 25°C  
TO-268 (D3) ( IXFT)  
IAR  
7
20  
700  
5
A
mJ  
EAR  
EAS  
dv/dt  
TC = 25°C  
mJ  
G
(TAB)  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
V/ns  
S
PD  
TC = 25°C  
180  
W
G = Gate  
D
= Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S = Source  
TAB = Drain  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
300  
°C  
Md  
1.13/10  
Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
6
4
g
g
z
IXYS advanced low Qg process  
z
Low gate charge and capacitances  
- easier to drive  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
- faster switching  
min.  
typ.  
max.  
z
z
z
International standard packages  
Low RDS (on)  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 2.5 mA  
900  
V
V
Unclamped Inductive Switching (UIS)  
rated  
VGS(th)  
3.0  
5.0  
z
Molding epoxies meet UL 94 V-0  
flammability classification  
IGSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
Advantages  
IDSS  
VDS = 0.8 VDSS  
VGS = 0 V  
T = 25°C  
TJJ = 125°C  
50  
1
µA  
mA  
z
Easy to mount  
Space savings  
RDS(on)  
V
= 10 V, ID = 0.5 ID25  
1.5  
PGuSlse test, t 300 µs, duty cycle d 2 %  
z
z
High power density  
© 2002 IXYS All rights reserved  
DS98645A(12/02)  

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