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IXFH90N20Q PDF预览

IXFH90N20Q

更新时间: 2024-11-17 22:31:55
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页数 文件大小 规格书
2页 102K
描述
HiPerFETTM Power MOSFETs Q-CLASS

IXFH90N20Q 数据手册

 浏览型号IXFH90N20Q的Datasheet PDF文件第2页 
Advanced Technical Information  
HiPerFETTM  
Power MOSFETs  
Q-CLASS  
IXFX 90N20Q  
IXFK 90N20Q  
VDSS  
= 200 V  
ID25  
RDS(on)  
=
=
90 A  
22 mΩ  
t 200 µs  
Single MOSFET Die  
rr  
N-ChannelEnhancementMode  
AvalancheRated, LowQg,  
High dV/dt, Low trr  
PLUS247
(TAB)  
G
D
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
T
= 25°C to 150°C  
= 25°C to 150°C; R = 1 MΩ  
300  
300  
V
V
J
J
TO-264AA(IXFK)  
GS  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
(TAB)  
ID25  
IDM  
IAR  
T
= 25°C  
73  
292  
73  
A
A
A
C
T
= 25°C, pulse width limited by T  
= 25°C  
C
JM  
T
C
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
EAR  
EAS  
T
= 25°C  
= 25°C  
60  
2.5  
mJ  
J
C
T
C
dv/dt  
I
I , di/dt 100 A/µs, V V  
5
V/ns  
S
DM  
DD  
DSS  
T
150°C, R = 2 Ω  
J
G
Features  
l
IXYS advanced low Qg process  
Low gate charge and capacitances  
- easier to drive  
- faster switching  
International standard packages  
Low RDS (on)  
PD  
TJ  
T
= 25°C  
500  
W
C
l
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l
l
l
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Rated for unclamped Inductive load  
switching (UIS) rated  
Md  
Mounting torque  
TO-264  
0.4/6  
Nm/lb.in.  
l
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Molding epoxies meet UL 94 V-0  
flammability classification  
Applications  
l
DC-DC converters  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
l
Battery chargers  
l
J
Switched-mode and resonant-mode  
power supplies  
min. typ. max.  
l
VGS = 0 V, ID = 4mA  
VDS = VGS, ID = 4mA  
300  
2.0  
V
DC choppers  
l
AC motor control  
VGS(th)  
IGSS  
4.0 V  
l
Temperature and lighting controls  
V
= ±20 V, V = 0  
±100 nA  
GS  
DS  
Advantages  
l
PLUS 247 package for clip or spring  
IDSS  
V
V
= V  
= 0 V  
100 µA  
2 mA  
TM  
DS  
DSS  
T
= 125°C  
GS  
J
mounting  
l
l
RDS(on)  
V
Note 1  
= 10 V, I = 0.5 I  
22 mΩ  
Space savings  
High power density  
GS  
D
D25  
© 2000 IXYS All rights reserved  
98676A (03/24/00)  

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