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IXFK100N10 PDF预览

IXFK100N10

更新时间: 2024-11-21 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 200K
描述
功能与特色: 应用: 优点:

IXFK100N10 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:PLASTIC PACKAGE-3Reach Compliance Code:compliant
风险等级:5.36其他特性:AVALANCHE RATED
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):100 A
最大漏极电流 (ID):100 A最大漏源导通电阻:0.012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:500 W最大功率耗散 (Abs):500 W
最大脉冲漏极电流 (IDM):560 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFK100N10 数据手册

 浏览型号IXFK100N10的Datasheet PDF文件第2页浏览型号IXFK100N10的Datasheet PDF文件第3页浏览型号IXFK100N10的Datasheet PDF文件第4页浏览型号IXFK100N10的Datasheet PDF文件第5页 
HiPerFETTM  
Power MOSFETs  
VDSS  
ID25  
RDS(on)  
IXFK100N10  
IXFN150N10  
100V 100 A 12 mW  
100V 150 A 12 mW  
trr £ 200 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
TO-264 AA (IXFK)  
Symbol  
TestConditions  
MaximumRatings  
IXFK  
IXFN  
VDSS  
VDGR  
TJ = 25°C to 150°C  
100  
100  
100  
100  
V
V
G
(TAB)  
D
TJ = 25°C to 150°C; RGS = 1 MW  
S
VGS  
Continuous  
Transient  
±20  
±30  
±20  
±30  
V
V
miniBLOC, SOT-227 B (IXFN)  
VGSM  
E153432  
S
ID25  
ID120  
IDM  
TC = 25°C  
100   
76  
150  
-
A
A
A
A
G
D
TC = 120°C, limited by external leads  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
560  
75  
560  
75  
G
IAR  
S
EAR  
TC = 25°C  
30  
5
30  
5
mJ  
S
D
S
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
PD  
TC = 25°C  
500  
520  
W
TJ  
-55 ... +150  
150  
-55 ... +150  
300  
°C  
°C  
°C  
Features  
TJM  
Tstg  
Internationalstandardpackages  
JEDECTO-264 AA,epoxymeet  
UL94V-0, flammability classification  
miniBLOCwithAluminiumnitride  
TL  
1.6 mm (0.063 in) from case for 10 s  
-
°C  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
-
-
2500  
3000  
V~  
V~  
isolation  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
Fast intrinsic Rectifier  
Md  
Mountingtorque  
Terminalconnectiontorque  
0.9/6  
-
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Weight  
10  
30  
g
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
DC-DC converters  
Synchronousrectification  
Battery chargers  
Switched-modeandresonant-mode  
min. typ. max.  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 8 mA  
100  
2
V
V
powersupplies  
DC choppers  
Temperatureandlightingcontrols  
Low voltage relays  
VGH(th)  
4
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
400 mA  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
2
mA  
Advantages  
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 75 A  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
12 mW  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
92803G(8/96)  
1 - 4  

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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 110A I(D) | TO-264AA