Datasheet > IXFH9N80

IXFH9N80

更新时间： 2024-11-06 14:56:11

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力特 - LITTELFUSE		/
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中文翻译

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数据手册

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IXFH9N80 数据手册

PreliminaryDataSheet

V_DSS

I_D25

R_DS(on)

t_rr

HiPerFET^TM

IXFH8N80 800V

IXFH9N80 800V

1.1Ω

0.9Ω

250 ns

Power MOSFETs

N-Channel Enhancement Mode

High dv/dt, Low t_rr, HDMOS^TMFamily

TO-247 AD (IXFH)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

800

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

±20

±30

TO-247 SMD*

V_GSM

I_D25

I_DM

I_AR

T_C= 25°C

8N80

9N80

8N80

9N80

8N80

9N80

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

D (TAB)

G = Gate

= Drain

E_AR

T_C= 25°C

S = Source

TAB = Drain

*Add suffix letter "S" for surface mountable

package

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

P_D

T_C= 25°C

180

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

• International standard packages

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic Rectifier

M_d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Applications

min. typ.

max.

• DC-DC converters

• Battery chargers

V_DSS

V_GS= 0 V, I_D= 3 mA

800

V_DSStemperature coefficient

0.088

%/K

• Switched-mode and resonant-mode

power supplies

• DC choppers

V_GS(th)

V_DS= V_GS, I_D= 2.5 mA

4.5

V_GS(th)temperature coefficient

-0.257

%/K

• AC motor control

• Temperature and lighting controls

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

250 µA

Advantages

V_DS= 0.8 V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

• Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

• Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%

8N80

9N80

1.1

0.9

Ω

• High power density

96527A (8/97)

12 3 4 5

中文翻译

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