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IXFH94N30P3 PDF预览

IXFH94N30P3

更新时间: 2024-11-18 20:55:15
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 149K
描述
Power Field-Effect Transistor, 94A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN

IXFH94N30P3 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:4.43
其他特性:AVALANCHE RATED雪崩能效等级(Eas):2500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:300 V最大漏极电流 (Abs) (ID):94 A
最大漏极电流 (ID):94 A最大漏源导通电阻:0.036 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1040 W
最大脉冲漏极电流 (IDM):235 A子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFH94N30P3 数据手册

 浏览型号IXFH94N30P3的Datasheet PDF文件第2页浏览型号IXFH94N30P3的Datasheet PDF文件第3页浏览型号IXFH94N30P3的Datasheet PDF文件第4页浏览型号IXFH94N30P3的Datasheet PDF文件第5页 
Preliminary Technical Information  
Polar3TM HiperFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 94A  
RDS(on) 36m  
IXFT94N30P3  
IXFQ94N30P3  
IXFH94N30P3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXFT)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
TO-3P (IXFQ)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
300  
300  
V
V
G
VDGR  
D
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
S
D (Tab)  
ID25  
IDM  
TC = 25C  
94  
A
A
TO-247 (IXFH)  
TC = 25C, Pulse Width Limited by TJM  
235  
IA  
TC = 25C  
TC = 25C  
47  
A
J
EAS  
2.5  
G
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
35  
V/ns  
W
D
D (Tab)  
S
1040  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Fast Intrinsic Rectifier  
Avalanche Rated  
Md  
Mounting Torque (TO-247 & TO-3P)  
1.13 / 10  
Nm/lb.in  
Low RDS(ON) and QG  
Weight  
TO-268  
TO-3P  
TO-247  
4.0  
5.5  
6.0  
g
g
g
Low Package Inductance  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
300  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
5.0  
          100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
IDSS  
25 A  
TJ = 125C  
750 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
36 m  
Robotics and Servo Controls  
DS100479A(12/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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