Datasheet > IXFK100N25

IXFK100N25

更新时间： 2024-11-19 14:56:39

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	177K
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中文翻译

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数据手册

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IXFK100N25 数据手册

HiPerFET^TM

Power MOSFETs

IXFX 100N25

IXFK 100N25

V_DSS= 250 V

I_D25= 100 A

R_DS(on)= 27 mΩ

Single MOSFET Die

t ≤ 250 ns

PLUS247^TM(IXFX)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

250

(TAB)

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_D104

I_DM

T_C= 25°C (MOSFET chip capability)

T_C= 104°C (External lead capability)

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

100

400

100

TO-264AA(IXFK)

I_AR

(TAB)

E_AR

E_AS

T_C= 25°C

G = Gate

S = Source

D = Drain

TAB = Drain

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

P_D

T_J

T_C= 25°C

560

-55 ... +150

°C

Features

International standard packages

Low R_{DS (on)}HDMOS^TMprocess

T_JM

T_stg

150

-55 ... +150

°C

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

T_L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M_d

Mounting torque

TO-264

0.9/6 Nm/lb.in.

Low package inductance

- easy to drive and to protect

Fast intrinsic rectifier

Weight

PLUS 247

TO-264

Applications

DC-DC converters

Battery chargers

Symbol

V_DSS

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Switched-mode and resonant-mode

power supplies

min. typ. max.

DC choppers

V_GS= 0 V, I_D= 3mA

250

2.0

AC motor control

Temperature and lighting controls

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 8mA

4.0 V

V_GS= ±20 V, V_DS= 0

±200 nA

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

100 µA

2 mA

PLUS 247^TMpackage for clip or spring

mounting

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Note 1

27 mΩ

Space savings

High power density

98613B (5/01)

12 3

中文翻译

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