Datasheet > IXFH80N10Q

IXFH80N10Q

更新时间： 2024-11-19 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	136K
描述
功能与特色: 应用: 优点:

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中文翻译

获取价格

数据手册

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IXFH80N10Q 数据手册

HiPerFET^TM

Power MOSFETs

Q-Class

IXFH 80N10Q V_DSS

= 100 V

= 80 A

IXFT 80N10Q

I_D25

R_DS(on)= 15 mW

t_rr£ 200ns

N-Channel Enhancement Mode

Avalanche Rated, High dV/dt

Low Gate Charge and Capacitances

Preliminary data

TO-247 AD (IXFH)

Symbol

TestConditions

MaximumRatings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

100

V_GS

V_GSM

Continuous

Transient

±20

±30

(TAB)

I_D25

I_DM

I_AR

T_C= 25°C

320

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

TO-268 (IXFT) Case Style

E_AR

E_AS

T_C= 25°C

1.5

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

(TAB)

P_D

T_C= 25°C

360

G = Gate

S = Source

D = Drain

TAB = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

1.6 mm (0.062 in.) from case for 10 s

300

°C

Features

M_d

Mountingtorque

(TO-247)

1.13/10 Nm/lb.in.

• IXYS advanced low gate charge

process

• Internationalstandardpackages

• Low gate charge and capacitance

- easier to drive

Weight

TO-247AD

TO-268

- faster switching

• Low R_{DS (on)}

• Unclamped Inductive Switching (UIS)

rated

• Molding epoxies meet UL94V-0

flammabilityclassification

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 mA

V_DS= V_GS, I_D= 4 mA

V_GS= ±20 V_DC, V_DS= 0

100

2.0

±100

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

• Easy to mount

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t £ 300 ms, duty cycle d £ 2 %

15 mW

IXYS reserves the right to change limits, test conditions, and dimensions.

98592B(7/00)

1 - 2

12 3

中文翻译

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