Datasheet > IXFH88N30P

IXFH88N30P

更新时间： 2024-11-21 14:56:31

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	174K
描述
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中文翻译

获取价格

数据手册

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IXFH88N30P 数据手册

Polar^TMHiPerFET^TM

Power MOSFET

V_DSS= 300V

I_D25= 88A

R_DS(on)≤ 40mΩ

t_rr≤ 200ns

IXFT88N30P

IXFH88N30P

IXFK88N30P

TO-268 (IXFT)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Tab

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-247(IXFH)

T_J= 25°C to 150°C

300

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

I_D25

I_L(RMS)

T_C= 25°C

External Lead Current Limit

TO-264 (IXFK)

I_DM

T_C= 25°C, Pulse Width Limited by T_JM

220

I_A

T_C= 25°C

E_AS

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

V/ns

Tab

T_C= 25°C

600

G = Gate

S = Source

= Drain

T_J

-55 to +150

+150

°C

Tab = Drain

T_JM

T_stg

Features

-55 to +150

T_L

1.6mm (0.063in) from Case for 10s

Plastic Body for 10s

300

260

°C

^zInternational Standard Packages

^zFast Intrinsic Diode

T_SOLD

^zAvalanche Rated

M_d

Mounting Torque (TO-247&TO-264)

1.13/10

Nm/lb.in.

^zLow R_DS(ON)and Q_G

^zLow Package Inductance

Weight

TO-268

TO-247

TO-264

Advantages

^zHigh Power Density

^zEasy to Mount

Symbol

Test Conditions

Characteristic Values

^zSpace Savings

(T_J= 25°C, Unless Otherwise Specified)

Min.

300

2.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 4mA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

5.0

^zDC-DC Coverters

^zBattery Chargers

±100 nA

^zSwitch-Mode and Resonant-Mode

Power Supplies

I_DSS

25 μA

T_J= 125°C

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

250 μA

^zDC Choppers

R_DS(on)

40 mΩ

^zAC and DC Motor Drives

Uninterrupted Power Supplies

High Speed Power Switching

Applications

DS99216F(11/09)

12 3 4 5 6

中文翻译

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