Datasheet > IXFC14N80P

IXFC14N80P

更新时间： 2024-11-21 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	91K
描述
PolarHV HiPerFET Power MOSFET ISOPLUS 220

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中文翻译

获取价格

数据手册

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IXFC14N80P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFC 14N80P

V_DSS= 800

I_D25

ISOPLUS 220^TM

R_DS(on)≤ 770 mΩ

trr ≤ 250 ns

(Electrically Isolated Tab)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

ISOPLUS220^TM(IXFC)

E153432

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

800

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

V_GSM

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

(Isolated Tab)

D = Drain

I_AR

T_C= 25°C

E_AR

E_AS

T_C= 25°C

G = Gate

S = Source

1.2

dv/dt

P_D

I_S≤ I_DM,di/dt≤100A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 5 Ω

V/ns

Features

^zSilicon chip on Direct-Copper-Bond

T_C= 25°C

130

substrate

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

^zLow drain to tab capacitance(<30pF)

T_L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V_ISOL

F_C

50/60 Hz, RMS, t = 1, leads-to-tab

Mounting Force

2500

Applications

11..65/2.5..15

N/lb

DC-DC converters

Battery chargers

Weight

Switched-mode and resonant-mode

power supplies

DC choppers

^zAC motor control

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

Advantages

Easy assembly

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

V_DS= V_GS, I_D= 4 mA

V_GS= 30 V, V_DS= 0 V

800

Space savings

3.0

5.5

High power density

100

I_DSS

V_DS= V_DSS

V_GS= 0 V

μA

T_J= 125°C

R_DS(on)

V_GS= 10 V, I_D= 7 A

770 mΩ

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

DS99594E(07/06)

12 3 4

中文翻译

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