Datasheet > IXFC52N30P_08

IXFC52N30P_08

更新时间： 2022-03-28 21:54:18

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	151K
描述
PolarHT Power MOSFET HiPerFET

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中文翻译

获取价格

数据手册

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IXFC52N30P_08 数据手册

PolarHT^TMPower

V_DSS= 300V

I_D25= 24A

R_DS(on)≤ 75mΩ

IXFC52N30P

MOSFET HiPerFET^TM

t_rr

≤ 200ns

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Avalanche Rated

ISOPLUS 220^TM

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

300

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

Isolated Tab

D = Drain

150

G = Gate

S = Source

I_A

T_C= 25°C

E_AS

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

100

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

^ꢀUL recognized package

^ꢀSilicon chip on Direct-Copper-Bond

substrate

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Avanlache rated

Fast intrinsic diode

V_ISOL

50/60 Hz, RMS

t = 1min

t = 1s

2500

3000

ꢀ

I_ISOL≤ 1mA

ꢀ

M_d

Mounting force

11..66 / 2.5..14.6

N/lb.

Weight

Advantages

ꢀ

Easy to mount

Space savings

High power density

ꢀ

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

Applications

(T_J= 25°C, unless otherwise specified)

ꢀ

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 4mA

V_GS= ±20V, V_DS= 0V

300

2.5

ꢀ

5.0

power supplies

DC choppers

AC motor drives

±100 nA

25 μA

ꢀ

I_DSS

V_DS= V_DSS

V_GS= 0V

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 26A, Note 1

75 mΩ

DS99246F(5/08)

12 3 4 5

中文翻译

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