是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 1000 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 60 A |
最大漏源导通电阻: | 0.033 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 240 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXFC74N20P | IXYS |
获取价格 |
PolarHT HiPerFET Power MOSFET ISOPLUS220 | |
IXFC80N08 | IXYS |
获取价格 |
HIPERFET-TM MOSFET ISOPLUS220-TM | |
IXFC80N085 | IXYS |
获取价格 |
HIPERFET-TM MOSFET ISOPLUS220-TM | |
IXFC80N10 | IXYS |
获取价格 |
HiPerFETTM MOSFET ISOPLUS220 | |
IXFC96N15P | IXYS |
获取价格 |
PolarHT HiPerFET Power MOSFET ISOPLUS220 | |
IXFD10N100-7Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD120N20-9X | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD12N90-7L | IXYS |
获取价格 |
Power Field-Effect Transistor, 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IXFD130N30-9Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 300V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD13N50F-5F | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |