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IXFC60N20 PDF预览

IXFC60N20

更新时间: 2024-11-24 11:13:59
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 74K
描述
HiPerFET MOSFET ISOPLUS220TM

IXFC60N20 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1000 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):60 A
最大漏源导通电阻:0.033 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFC60N20 数据手册

 浏览型号IXFC60N20的Datasheet PDF文件第2页 
ADVANCE TECHNICAL INFORMATION  
HiPerFETTM MOSFET  
ISOPLUS220TM  
IXFC 60N20 V  
= 200 V  
= 60 A  
DSS  
I
D25  
Electrically Isolated Back Surface  
R
= 33 mΩ  
250 ns  
DS(on)  
t
N-ChannelEnhancementMode  
Highdv/dt, Lowtrr, HDMOSTM Family  
rr  
ISOPLUS220TM  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
200  
200  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
G
VGSM  
D
S
Isolated back surface*  
D = Drain,  
ID25  
IDM  
IAR  
TC = 25°C  
60  
240  
60  
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
G = Gate,  
S = Source  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
1.0  
mJ  
J
* Patent pending  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
Features  
l
Silicon chip on Direct-Copper-Bond  
substrate  
PD  
TC = 25°C  
230  
W
- High power dissipation  
-Isolatedmountingsurface  
-2500Velectricalisolation  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
l
l
l
l
Lowdraintotabcapacitance(<35pF)  
Low RDS (on)  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
3
°C  
Ruggedpolysilicongatecellstructure  
UnclampedInductiveSwitching(UIS)  
rated  
Weight  
g
l
FastintrinsicRectifier  
Applications  
l
DC-DC converters  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
l
Batterychargers  
l
min. typ. max.  
Switched-modeandresonant-mode  
power supplies  
DC choppers  
l
VDSS  
VGS = 0 V, ID = 250 µA  
200  
2
V
V
l
ACmotorcontrol  
VGS(th)  
VDS = VGS, ID = 4 mA  
4
Advantages  
l
Easyassembly:noscrewsorisolation  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
25 µA  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
foilsrequired  
Space savings  
l
1
mA  
l
High power density  
RDS(on)  
VGS = 10 V, ID = IT  
Notes 1, 2  
33 mΩ  
l
Lowcollectorcapacitancetoground  
(low EMI)  
© 2001 IXYS All rights reserved  
98843 (6/01)  

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