是否无铅: | 不含铅 | 生命周期: | Transferred |
零件包装代码: | DIE | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.72 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1000 V | 最大漏源导通电阻: | 0.42 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 元件数量: | 1 |
工作模式: | ENHANCEMENT MODE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXFD24N50-7X | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD24N90Q-8Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IXFD26N90-9X | IXYS |
获取价格 |
Power Field-Effect Transistor, 900V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD27N80Q-8Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD280N085-9Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 85V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD28N50F-74 | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD30N60Q-82 | IXYS |
获取价格 |
Power Field-Effect Transistor, 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD32N50-8X | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD340N07-9Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 70V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD34N80-9X | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |