是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | DIE |
包装说明: | 0.550 X 0.355 INCH, DIE | Reach Compliance Code: | compliant |
风险等级: | 5.76 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏源导通电阻: | 0.11 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XUUC-N8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | UNCASED CHIP |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXFD50N20-7X | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD50N80Q2-95 | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD52N30Q-82 | IXYS |
获取价格 |
Power Field-Effect Transistor, 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD52N60Q2-94 | IXYS |
获取价格 |
Power Field-Effect Transistor, 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD55N50-9X | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IXFD55N50F-9F | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IXFD60N20F-74 | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD60N55Q2-94 | IXYS |
获取价格 |
Power Field-Effect Transistor, 550V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD60N60-9Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD66N20Q-72 | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide |