是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | DIE |
包装说明: | 0.559 X 0.417 INCH, DIE | Reach Compliance Code: | compliant |
风险等级: | 5.76 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏源导通电阻: | 0.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 元件数量: | 1 |
工作模式: | ENHANCEMENT MODE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXFD60N20F-74 | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD60N55Q2-94 | IXYS |
获取价格 |
Power Field-Effect Transistor, 550V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD60N60-9Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD66N20Q-72 | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD66N50Q2-94 | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD6N100F-5F | IXYS |
获取价格 |
Power Field-Effect Transistor, 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
IXFD6N100Q-5U | IXYS |
获取价格 |
Power Field-Effect Transistor, 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
IXFD70N15-7X | IXYS |
获取价格 |
Power Field-Effect Transistor, 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD70N60Q2-95 | IXYS |
获取价格 |
Power Field-Effect Transistor, 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD72N55Q2-95 | IXYS |
获取价格 |
Power Field-Effect Transistor, 550V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |