Datasheet > IXFE44N50Q

IXFE44N50Q

更新时间： 2024-09-25 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	555K
描述
HiPerFET Power MOSFETs Q-Class

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中文翻译

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数据手册

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IXFE44N50Q 数据手册

HiPerFET^TM

Power MOSFETs

Q-Class

V_DSSI_D25

R_DS(on)

IXFE 44N50Q

IXFE 48N50Q

500 V 39 A 120 mΩ

500 V 41 A 110 mΩ

t_rr≤ 250 ns

N-ChannelEnhancementMode

Avalanche Rated, Low Q_g, High dv/dt

Preliminary data sheet

ISOPLUS227^TM(IXFE)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

500

V_GS

V_GSM

Continuous

Transient

I_D25

I_DM

I_AR

T_C= 25°C

44N50Q

48N50Q

T_C= 25°C, pulse width limited by T_JM44N50Q 176

G = Gate

D = Drain

48N50Q 192

S = Source

T_C= 25°C

Either Source terminal at miniBLOC can be used

asMainorKelvinSource

E_AR

E_AS

2.5

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

Features

•Conforms to SOT-227B outline

•Low R_{DS (on)}HDMOS^TMprocess

•Ruggedpolysilicongatecellstructure

P_D

T_C= 25°C

400

T_J

-40 to +150

150

°C

T_JM

T_stg

-40 to +150

•UnclampedInductiveSwitching(UIS)

rated

V_ISOL

50/60 Hz, RMS

_ISOL≤ 1 mA

t = 1 min

t = 1 s

2500

3000

•Lowpackageinductance

•FastintrinsicRectifier

M_d

Mounting torque

Terminal connection torque

1.5/13

Nm/lb.in.

Weight

Symbol

Applications

• DC-DC converters

• Batterychargers

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

• Switched-modeandresonant-mode

min.

typ.

max.

power supplies

• DC choppers

• Temperatureandlightingcontrols

V_DSS

V_GS(th)

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 4 mA

500

2.0

4.0

I_GSS

I_DSS

V_GS= 20 V_DC, V_DS= 0

100

Advantages

V_DS= V

= 25°C

100

µA

V_GS= 0^DV^SS

T_J^J= 125°C

• Low cost

• Easy to mount

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= I_T

44N50Q

48N50Q

120 mΩ

110 mΩ

Notes 1, 2

DS98895B(08/03)

12 3 4

中文翻译

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