是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DIE | 包装说明: | 0.559 X 0.417 INCH, DIE |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏源导通电阻: | 0.085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
元件数量: | 1 | 工作模式: | ENHANCEMENT MODE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXFD6N100F-5F | IXYS |
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Power Field-Effect Transistor, 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
IXFD6N100Q-5U | IXYS |
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Power Field-Effect Transistor, 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
IXFD70N15-7X | IXYS |
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Power Field-Effect Transistor, 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD70N60Q2-95 | IXYS |
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Power Field-Effect Transistor, 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD72N55Q2-95 | IXYS |
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Power Field-Effect Transistor, 550V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD73N30Q-8Y | IXYS |
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Power Field-Effect Transistor, 300V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD75N10-7X | IXYS |
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Power Field-Effect Transistor, 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD76N07-7X | IXYS |
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Power Field-Effect Transistor, 70V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD80N10Q-8X | IXYS |
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Power Field-Effect Transistor, 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD80N50-9Y | IXYS |
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Power Field-Effect Transistor, 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |