5秒后页面跳转
IXFE48N50QD2 PDF预览

IXFE48N50QD2

更新时间: 2024-02-01 03:05:03
品牌 Logo 应用领域
IXYS 功率因数校正电机
页数 文件大小 规格书
2页 543K
描述
Buck & Boost Configurations for PFC & Motor Control Circuits

IXFE48N50QD2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X4
针数:4Reach Compliance Code:compliant
风险等级:5.83其他特性:AVALANCHE RATED
雪崩能效等级(Eas):2500 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):41 A最大漏极电流 (ID):41 A
最大漏源导通电阻:0.11 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):400 W最大脉冲漏极电流 (IDM):192 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFE48N50QD2 数据手册

 浏览型号IXFE48N50QD2的Datasheet PDF文件第2页 
HiPerFETTM  
Power MOSFETs  
VDSS  
ID(cont)  
RDS(on)  
t
rr  
500 V  
39 A  
41A  
0.12 35 ns  
0.11 35 ns  
IXFE44N50QD2 IXFE44N50QD3  
IXFE48N50QD2 IXFE48N50QD3 500 V  
Buck & Boost Configurations for  
PFC & Motor Control Circuits  
3
3
4
2
2
4
D2  
D3  
1
1
ISOPLUS227TM(IXFE)  
Symbol  
TestConditions  
Maximum Ratings  
1
2
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
4
ID25  
IDM  
IAR  
TC = 25°C  
44N50Q  
48N50Q  
39  
41  
A
A
3
2 = Gate  
3 = Drain  
4 = Anode/Cathode  
TC = 25°C,  
pulse width limited by max. TJM 48N50Q  
44N50Q  
176  
192  
A
A
1 = Source  
TC = 25°C  
48  
A
EAR  
EAS  
T
= 25°C  
60  
mJ  
J
TCC = 25°C  
2.5  
Features  
Popular Buck & Boost circuit  
topologies  
dv/dt  
IS IDM, -di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
15  
V/ns  
Conforms to SOT-227B outline  
Isolation voltage 3000 V~  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Low drain-to-case capacitance  
(<60 pF)  
PD  
TC = 25°C  
400  
W
VRRM  
IFAVM  
IFRM  
600  
60  
V
A
TC = 70°C; rectangular, d = 0.5  
tp <10 µs; pulse width limited by TJ  
TC = 25°C  
800  
180  
A
- reduced RFI  
Ultra-fast FRED diode with soft  
reverse recovery  
PD  
W
TJ  
TJM  
Tstg  
-40 ... +150  
150  
-40 ... +150  
°C  
°C  
°C  
Applications  
Power factor controls and buck  
regulators  
VISOL  
50/60 Hz, RMS  
ISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
I
DC servo and robotic drives  
DC choppers  
Md  
Mountingtorque  
Terminalconnectiontorque(M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Switch reluctance motor controls  
Advantages  
Weight  
19  
g
Easy to mount with 2 screws  
Space savings  
Tightly coupled FRED  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2004 IXYS All rights reserved  
DS98903C(03/04)  

与IXFE48N50QD2相关器件

型号 品牌 获取价格 描述 数据表
IXFE48N50QD3 IXYS

获取价格

Buck & Boost Configurations for PFC & Motor Control Circuits
IXFE50N50 IXYS

获取价格

HiPerFETTM Power MOSFET
IXFE55N50 IXYS

获取价格

HiPerFETTM Power MOSFET
IXFE73N30Q IXYS

获取价格

HiPerFET Power MOSFETs Q-Class
IXFE80N50 IXYS

获取价格

HiPerFET Power MOSFETs Single Die MOSFET
IXFF24N100 IXYS

获取价格

HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
IXFF24N100_06 IXYS

获取价格

HiPerFET Power MOSFET
IXFG55N50 IXYS

获取价格

HiPerFET Power MOSFETs ISOPLUS247
IXFH100N25P IXYS

获取价格

PolarHT HiPerFET Power MOSFET
IXFH100N25P LITTELFUSE

获取价格

功能与特色: 优点: 应用: