Datasheet > IXFF24N100_06

IXFF24N100_06

更新时间： 2024-09-25 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	119K
描述
HiPerFET Power MOSFET

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中文翻译

获取价格

数据手册

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IXFF24N100_06 数据手册

IXFF 24N100

I_D25= 22 A

V_DSS= 1000 V

R_DSon= 390 mΩ

HiPerFET^TM

Power MOSFET

in High Voltage ISOPLUS i4-PAC^TM

Features

MOSFET

• HiPerFET^TMtechnology

- low R_DSon

- low gate charge for high frequency

operation

- unclamped inductive switching (UIS)

capability

- dv/dt ruggedness

Symbol

V_DSS

Conditions

Maximum Ratings

T_VJ= 25°C to 150°C

1000

V_GS

I_D25

I_D90

T_C= 25°C

T_C= 90°C

- fast intrinsic reverse diode

• ISOPLUS i4-PAC^TM

I_F25

I_F90

(diode) T_C= 25°C

(diode) T_C= 90°C

120

high voltage package

- isolated back surface

- enlarged creepage towards heatsink

- enlarged creepage between high

voltage pins

dv/dt

V_DS< V_DSS; I_F≤ 100A;⎮di_F/dt⎮≤ 100A/µs; R_G= 2 Ω

T_VJ= 150°C

5 V/ns

E_AR

T_C= 25°C

64 mJ

- application friendly pinout

- high reliability

- industry standard outline

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

Applications

min.

typ. max.

• switched mode power supplies

• DC-DC converters

• resonant converters

R_DSon

V_GSth

I_DSS

V_GS= 10 V; I_D= I_D90

390 mΩ

V_DS= 20 V;I_D= 8 mA;

2.5

V_DS= V_DSS;V_GS= 0 V; T_VJ= 25°C

T_VJ= 125°C

0.1 mA

0.25

I_GSS

V_GS= 20 V; V_DS= 0 V

200 nA

Q_g

Q_gs

Q_gd

250

135

V_GS= 10 V; V_DS= 500 V; I_D= 12 A

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V; V_DS= 500 V;

I_D= 12 A; R_G= 1 Ω

V_F

(diode) I_F= 12 A;V_GS= 0 V

1.5

t_rr

(diode) I_F= 24 A; -di/dt = 100 A/µs; V_DS= 100 V

250

R_thJC

0.32 K/W

IXYS reserves the right to change limits, test conditions, and dimensions.

1 - 4

12 3 4

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