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IXFH102N15T

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
7页 234K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低的功率耗损。 再结合广泛的工作结温范围(从-40 °C到175 °C),这些产品非常适合汽车应用以及其他处

IXFH102N15T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.47JESD-609代码:e1
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)

IXFH102N15T 数据手册

 浏览型号IXFH102N15T的Datasheet PDF文件第2页浏览型号IXFH102N15T的Datasheet PDF文件第3页浏览型号IXFH102N15T的Datasheet PDF文件第4页浏览型号IXFH102N15T的Datasheet PDF文件第5页浏览型号IXFH102N15T的Datasheet PDF文件第6页浏览型号IXFH102N15T的Datasheet PDF文件第7页 
Trench Gate Power  
MOSFET HiperFETTM  
VDSS = 150V  
ID25 = 102A  
RDS(on) 18mΩ  
IXFA102N15T  
IXFH102N15T  
IXFP102N15T  
trr  
120ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXFA)  
G
S
(TAB)  
TO-220 (IXFP)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C RGS = 1MΩ  
150  
150  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
D
S
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, Pulse Width Limited by TJM  
102  
75  
300  
A
A
A
TO-247 (IXFH)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
51  
750  
A
mJ  
(TAB)  
dV/dt  
PD  
IS IDM, VDD VDSS , TJ 175°C  
TC = 25°C  
20  
V/ns  
W
G
D
S
455  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
TAB = Drain  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z International Standard Packages  
z Avalanche Rated  
M
Mounting Torque  
Mounting Force  
(TO-220 & TO-247)  
(TO-263)  
1.13 / 10  
10..65 / 2.2..14.6  
Nmlb.in.  
N/lb.  
FCd  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
z
Easy to Mount  
Space Savings  
z
z
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
150  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
z DC-DC Converters  
z Battery Chargers  
5.0  
z Switched-Mode and Resonant-Mode  
Power Supplies  
± 200 nA  
μA  
z DC Choppers  
z AC Motor Drives  
IDSS  
5
TJ = 150°C  
750 μA  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
18 mΩ  
DS100045A(04/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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