IXFE44N60

更新时间： 2024-01-04 18:55:44

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	85K
描述
HiPerFET Power MOSFETs Single Die MOSFET

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中文翻译

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数据手册

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IXFE44N60 数据手册

HiPerFET^TM

IXFE 44N60

V_DSS= 600 V

I_D2541 A

R_DS(on)= 130 mΩ

Power MOSFETs

Single Die MOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

t ≤ 250 ns

Preliminary data sheet

Symbol

TestConditions

MaximumRatings

ISOPLUS227^TM(IXFE)

V_DSS

V_DGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

I_DM

I_AR

T_C= 25°C

176

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

G = Gate

D = Drain

S = Source

E_AR

E_AS

T_C= 25°C

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

P_D

T_C= 25°C

500

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

•Conforms to SOT-227B outline

•Low R_{DS (on)}HDMOS^TMprocess

•Ruggedpolysilicongatecellstructure

T_J

1.6 mm (0.63 in) from case for 10 s

50/60 Hz, RMS t = 1 min

°C

•UnclampedInductiveSwitching(UIS)

V_ISOL

2500

3000

rated

I_ISOL≤ 1 mA

t = 1 s

•Lowpackageinductance

•FastintrinsicRectifier

M_d

Mountingtorque

Terminalconnectiontorque

1.5/13 Nm/lb.in.

Weight

Applications

• DC-DC converters

• Batterychargers

• Switched-modeandresonant-mode

power supplies

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• DC choppers

• Temperatureandlightingcontrols

V_DSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 8 mA

600

2.5

V_GH(th)

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

100 µA

Advantages

• Low cost

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

• Easy to mount

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= I_T

Note1

130 mΩ

98894 (1/02)

中文翻译

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