是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, R-XUUC-N9 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏源导通电阻: | 0.14 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XUUC-N9 | 元件数量: | 1 |
端子数量: | 9 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | UNCASED CHIP | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXFD44N80-9Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
![]() |
IXFD48N50Q-8Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
![]() |
IXFD50N20-7X | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide |
![]() |
IXFD50N80Q2-95 | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
![]() |
IXFD52N30Q-82 | IXYS |
获取价格 |
Power Field-Effect Transistor, 300V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide |
![]() |
IXFD52N60Q2-94 | IXYS |
获取价格 |
Power Field-Effect Transistor, 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
![]() |
IXFD55N50-9X | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
![]() |
IXFD55N50F-9F | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
![]() |
IXFD60N20F-74 | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide |
![]() |
IXFD60N55Q2-94 | IXYS |
获取价格 |
Power Field-Effect Transistor, 550V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
![]() |