是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | DIE |
包装说明: | 0.550 X 0.355 INCH, DIE | Reach Compliance Code: | compliant |
风险等级: | 5.76 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 900 V | 最大漏源导通电阻: | 0.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 元件数量: | 1 |
工作模式: | ENHANCEMENT MODE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXFD26N90-9X | IXYS |
获取价格 |
Power Field-Effect Transistor, 900V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD27N80Q-8Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD280N085-9Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 85V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD28N50F-74 | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD30N60Q-82 | IXYS |
获取价格 |
Power Field-Effect Transistor, 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD32N50-8X | IXYS |
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Power Field-Effect Transistor, 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD340N07-9Y | IXYS |
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Power Field-Effect Transistor, 70V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD34N80-9X | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD36N100-9Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 1000V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD36N55Q2-84 | IXYS |
获取价格 |
Power Field-Effect Transistor, 550V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |