是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | DIE |
包装说明: | 0.348 X 0.283 INCH, DIE | Reach Compliance Code: | compliant |
风险等级: | 5.76 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏源导通电阻: | 0.35 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XUUC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | UNCASED CHIP |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXFD20N80Q-8X | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD21N100F-8F | IXYS |
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Power Field-Effect Transistor, 1000V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD21N100Q-8Y | IXYS |
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Power Field-Effect Transistor, 1000V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD21N50F-7F | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD230N10-9Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD23N60Q-72 | IXYS |
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Power Field-Effect Transistor, 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD23N80Q-82 | IXYS |
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Power Field-Effect Transistor, 800V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD24N100-9X | IXYS |
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Power Field-Effect Transistor, 1000V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD24N100F-9F | IXYS |
获取价格 |
Power Field-Effect Transistor, 1000V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD24N50-7X | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |