是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
包装说明: | UNCASED CHIP, R-XUUC-N9 | Reach Compliance Code: | compliant |
风险等级: | 5.76 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏源导通电阻: | 0.013 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XUUC-N9 | 元件数量: | 1 |
端子数量: | 9 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | UNCASED CHIP | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXFD15N80-7X | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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IXFD15N80Q-7Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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IXFD16N90Q-8X | IXYS |
获取价格 |
Power Field-Effect Transistor, 900V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
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IXFD17N80Q-72 | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.67ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
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IXFD180N07-9X | IXYS |
获取价格 |
Power Field-Effect Transistor, 70V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
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IXFD180N085-9X | IXYS |
获取价格 |
Power Field-Effect Transistor, 85V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
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IXFD180N20-9Y | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide |
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IXFD20N60-7X | IXYS |
获取价格 |
Power Field-Effect Transistor, 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
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IXFD20N80Q-8X | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
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IXFD21N100F-8F | IXYS |
获取价格 |
Power Field-Effect Transistor, 1000V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide |
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