是否无铅: | 不含铅 | 生命周期: | Transferred |
零件包装代码: | DIE | 包装说明: | UNCASED CHIP, R-XUUC-N9 |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 150 V | 最大漏源导通电阻: | 0.013 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XUUC-N9 |
元件数量: | 1 | 端子数量: | 9 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | UNCASED CHIP |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXFD15N80-7X | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IXFD15N80Q-7Y | IXYS |
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Power Field-Effect Transistor, 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IXFD16N90Q-8X | IXYS |
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Power Field-Effect Transistor, 900V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD17N80Q-72 | IXYS |
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Power Field-Effect Transistor, 800V, 0.67ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD180N07-9X | IXYS |
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Power Field-Effect Transistor, 70V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD180N085-9X | IXYS |
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Power Field-Effect Transistor, 85V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD180N20-9Y | IXYS |
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Power Field-Effect Transistor, 200V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXFD20N60-7X | IXYS |
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Power Field-Effect Transistor, 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD20N80Q-8X | IXYS |
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Power Field-Effect Transistor, 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXFD21N100F-8F | IXYS |
获取价格 |
Power Field-Effect Transistor, 1000V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide |