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IXFC26N50Q PDF预览

IXFC26N50Q

更新时间: 2024-11-24 21:17:55
品牌 Logo 应用领域
IXYS 开关脉冲晶体管
页数 文件大小 规格书
2页 529K
描述
Power Field-Effect Transistor, 23A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS220, 3 PIN

IXFC26N50Q 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.72外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (ID):23 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):92 A认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFC26N50Q 数据手册

 浏览型号IXFC26N50Q的Datasheet PDF文件第2页 
ADVANCE TECHNICAL INFORMATION  
VDSS  
ID25  
RDS(on)  
HiPerFETTM MOSFETs  
IXFC 26N50Q 500 V  
23 A  
0.20 Ω  
ISOPLUS220TM  
IXFC 24N50Q 500 V  
21 A  
0.23 Ω  
Electrically Isolated Back Surface  
trr 250 ns  
N-ChannelEnhancementMode  
High dV/dt, Low trr, HDMOSTM Family  
ISOPLUS 220TM  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
500  
500  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
G
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
D
S
Isolated back surface*  
D = Drain  
ID25  
IDM  
IAR  
TC = 25°C  
26N50  
24N50  
26N50  
24N50  
26N50  
24N50  
23  
21  
92  
84  
26  
24  
A
A
A
A
A
A
G = Gate  
S = Source  
TC = 25°C, Pulse width limited by TJM  
TC = 25°C  
Features  
Silicon chip on Direct-Copper-Bond  
substrate  
EAR  
TC = 25°C  
30  
5
mJ  
z
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
V/ns  
- High power dissipation  
-Isolatedmountingsurface  
-2500Velectricalisolation  
Lowdraintotabcapacitance(<35pF)  
Low RDS (on) HDMOSTM process  
Ruggedpolysilicongatecellstructure  
PD  
TC = 25°C  
230  
W
z
z
z
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
UnclampedInductiveSwitching(UIS)  
rated  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
2500  
3
°C  
V~  
g
z
FastintrinsicRectifier  
VISOL  
Weight  
50/60 Hz, RMS  
t = 1 minute leads-to-tab  
Applications  
z
DC-DC converters  
Batterychargers  
z
z
Switched-modeandresonant-mode  
power supplies  
z
DC choppers  
Symbol  
TestConditions  
Characteristic Values  
z
AC motor control  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Advantages  
VDSS  
VGS = 0 V, ID = 250uA  
500  
2
V
V
z
Easy assembly: no screws, or isolation  
foilsrequired  
VGS(th)  
IGSS  
VDS = VGS, ID = 4mA  
VGS = 20 VDC, VDS = 0  
4
z
Space savings  
High power density  
Lowcollectorcapacitancetoground  
(low EMI)  
100 nA  
z
z
IDSS  
VDS = 0.8•VDSS  
VGS = 0 V  
T = 25°C  
TJJ = 125°C  
200  
1
µA  
mA  
See IXFH26N50Q data sheet for  
characteristiccurves  
RDS(on)  
V
= 10 V, ID = IT  
26N50  
24N50  
0.20  
0.23  
NGoStes 1 & 2  
DS98882A(07/03)  
© 2003 IXYS All rights reserved  

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