Datasheet > IXFC36N50P

IXFC36N50P

更新时间： 2024-11-24 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	248K
描述
PolarHV HiPerFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFC36N50P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFC 36N50P

IXFR 36N50P

V_DSS= 500

I_D2519

R_DS(on)≤ 190 mΩ

≤ 200 ns

(Electrically Isolated Back Surface)

t_rr

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

ISOPLUS220^TM(IXFC)

E153432

V_DSS

V_DGR

T_J= 25° C to 150° C

500

T_J= 25° C to 150° C; R_GS= 1 MΩ

V_GSS

V_GSM

Continuous

Transient

Isolated back surface

I_D25

I_DM

T_C= 25° C

T_C= 25° C, pulse width limited by T_JM

100

ISOPLUS247^TM(IXFR)

E153432

I_AR

T_C=25° C

E_AR

E_AS

1.5

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 4 Ω

V/ns

Isolated back surface

T_C=25° C

156

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

D = Drain

S = Source

T_L

1.6 mm (0.062 in.) from case for 10 s

50/60 Hz, RMS, 1 minute

300

°C

Features

International standard isolated

packages

UL recognized packages

V_ISOL

2500

F_C

Mounting Force

(IXFC)

(IXFR)

11..65 / 2.5..15

20..120 / 4.5..25

N/lb

Silicon chip on Direct-Copper-Bond

Weight

(IXFC)

(IXFR)

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Fast intrinsic diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25° C unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

500

V_DS= V_GS, I_D= 4 mA

2.5

5.0

V_GS

30 V_DC, V_DS= 0

100

Advantages

Easy to mount

Space savings

High power density

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

T_J= 125° C

R_DS(on)

V_GS= 10 V, I_D= I_T

190 mΩ

DS99312E(10/05)

12 3 4 5

中文翻译

下载PDF

与IXFC36N50P相关器件

型号	品牌	获取价格	描述	数据表
IXFC40N30Q	IXYS	获取价格	Power Field-Effect Transistor, 36A I(D), 300V, 0.08ohm, 1-Element, N-Channel, Silicon, Met
IXFC52N30P	IXYS	获取价格	PolarHTTM HiPerFET Power MOSFET
IXFC52N30P_08	IXYS	获取价格	PolarHT Power MOSFET HiPerFET
IXFC60N20	IXYS	获取价格	HiPerFET MOSFET ISOPLUS220TM
IXFC74N20P	IXYS	获取价格	PolarHT HiPerFET Power MOSFET ISOPLUS220
IXFC80N08	IXYS	获取价格	HIPERFET-TM MOSFET ISOPLUS220-TM
IXFC80N085	IXYS	获取价格	HIPERFET-TM MOSFET ISOPLUS220-TM
IXFC80N10	IXYS	获取价格	HiPerFETTM MOSFET ISOPLUS220
IXFC96N15P	IXYS	获取价格	PolarHT HiPerFET Power MOSFET ISOPLUS220
IXFD10N100-7Y	IXYS	获取价格	Power Field-Effect Transistor, 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide S