Datasheet > IXFC16N50P

IXFC16N50P

更新时间： 2022-11-10 23:10:53

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	202K
描述
PolarHV HiPerFET Power MOSFET

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数据手册

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IXFC16N50P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

V_DSS= 500V

I_D25= 10A

IXFC16N50P

R_DS(on)≤ 450mΩ

t_rr

≤ 200ns

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

ISOPLUS 220^TM

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

V_DGR

V_GSS

V_GSM

Continuous

Transient

±30

±40

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

Isolated Tab

D = Drain

G = Gate

S = Source

I_A

T_C= 25°C

E_AS

750

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

Features

125

^zUL Recognized Package

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

^zSilicon Chip on Direct-Copper-Bond

Substrate

- High Power Dissipation

- Isolated Mounting Surface

- 2500V Electrical Isolation

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Avanlache Rated

V_ISOL

50/60 Hz, RMS

t = 1min

t = 1s

2500

3000

Fast Intrinsic Diode

I_ISOL≤ 1mA

M_d

Mounting Force

11..65 / 2.5..14.6

N/lb.

Advantages

Weight

Easy to Mount

Space Savings

High Power Density

Applications:

Symbol

Test Conditions

Characteristic Values

^zSwitched-Mode and Resonant-Mode

Power Supplies

(T_J= 25°C, Unless Otherwise Specified)

Min.

500

3.0

Typ.

Max.

^zDC-DC Converters

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 2.5mA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

^zLaser Drivers

^zAC and DC Motor Drives

^zRobotics and Servo Controls

5.5

±100 nA

I_DSS

15 μA

T_J= 125°C

250 μA

R_DS(on)

V_GS= 10V, I_D= 8A, Note 1

450 mΩ

DS99411F(5/09)

12 3 4

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