Datasheet > IXFA14N60P

IXFA14N60P

更新时间： 2024-09-13 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	151K
描述
PolarHV HiperFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IXFA14N60P 数据手册

PolarHV^TMHiperFET

Power MOSFET

V_DSS= 600V

I_D25= 14A

IXFA14N60P

IXFP14N60P

IXFH14N60P

R_DS(on)≤ 550mΩ

t_rr

≤ 200ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-263

(TAB)

TO-220

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C R_GS= 1MΩ

600

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

(TAB)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

TO-247

I_A

E_AS

T_C= 25°C

900

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

(TAB)

300

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

= Drain

S = Source

TAB = Drain

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10 seconds

300

260

°C

Features

Mounting Torque

Mounting Force

(TO-220 & TO-247)

(TO-263)

1.13 / 10

10..65 / 2.2..14.6

Nmlb.in.

N/lb.

F_C^d

^zInternational standard packages

^zAvalanche rated

Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min.

600

3.0

Typ.

Max.

Applications:

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 2.5mA

V_GS= ± 30V, V_DS= 0V

^zSwitched-mode and resonant-mode

power supplies

5.5

^zDC-DC Converters

^zLaser Drivers

± 100 nA

μA

I_DSS

V_DS= V_DSS

V_GS= 0V

^zAC and DC motor drives

^zRobotics and servo controls

T_J= 125°C

500 μA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

450

550 mΩ

DS99389F(12/08)

12 3 4 5

中文翻译

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IXFA14N60P 替代型号

型号	品牌	替代类型	描述	数据表
IXFA14N60P3	IXYS	类似代替	Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IXFP14N60P	IXYS	类似代替	PolarHV HiperFET Power MOSFET
IXFH14N60P	IXYS	类似代替	PolarHV HiperFET Power MOSFET

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