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IXFA230N075T2-7 PDF预览

IXFA230N075T2-7

更新时间: 2024-09-14 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 200K
描述
这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能(Tc=@25oC)。 通过结合高电流额定值与紧凑的封装选择,这些尺寸更加小巧的器件能够控制更高的功率。

IXFA230N075T2-7 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.69
Is Samacsys:NBase Number Matches:1

IXFA230N075T2-7 数据手册

 浏览型号IXFA230N075T2-7的Datasheet PDF文件第2页浏览型号IXFA230N075T2-7的Datasheet PDF文件第3页浏览型号IXFA230N075T2-7的Datasheet PDF文件第4页浏览型号IXFA230N075T2-7的Datasheet PDF文件第5页浏览型号IXFA230N075T2-7的Datasheet PDF文件第6页浏览型号IXFA230N075T2-7的Datasheet PDF文件第7页 
Advance Technical Information  
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 75V  
ID25 = 230A  
RDS(on) 4.2mΩ  
IXFA230N075T2-7  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-263 (7-lead)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
1
TJ = 25°C to 175°C  
75  
75  
V
V
7
VDGR  
TJ = 25°C to 175°C, RGS = 1MΩ  
Tab  
VGSM  
Transient  
± 20  
V
Pins: 1 - Gate  
2, 3 - Source  
5,6,7 - Source  
Tab (8) - Drain  
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
230  
160  
700  
A
A
A
TC = 25°C, pulse width limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
115  
850  
480  
A
mJ  
W
EAS  
PD  
Features  
z International Standard Package  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Avalanche Rated  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +175  
z Fast Intrinsic Rectifier  
TL  
Tsold  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z
Low RDS(on)  
Weight  
TO-263  
3
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z
Automotive  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
- Motor Drives  
- 12V Power Bus  
- ABS Systems  
DC/DC Converters and Off-Line UPS  
Primary- Side Switch  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
75  
V
V
2.0  
4.0  
z
z
±200 nA  
z
High Current Switching Applications  
IDSS  
25 μA  
TJ = 150°C  
VGS = 10V, ID = 50A, Notes 1& 2  
250 μA  
RDS(on)  
4.2 mΩ  
DS100244(03/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  

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