5秒后页面跳转
IXFA16N60P3 PDF预览

IXFA16N60P3

更新时间: 2024-11-18 19:32:27
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 327K
描述
Power Field-Effect Transistor,

IXFA16N60P3 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.76
Base Number Matches:1

IXFA16N60P3 数据手册

 浏览型号IXFA16N60P3的Datasheet PDF文件第2页浏览型号IXFA16N60P3的Datasheet PDF文件第3页浏览型号IXFA16N60P3的Datasheet PDF文件第4页浏览型号IXFA16N60P3的Datasheet PDF文件第5页浏览型号IXFA16N60P3的Datasheet PDF文件第6页 
Polar3 TM HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 16A  
RDS(on) 470m  
IXFA16N60P3  
IXFP16N60P3  
IXFH16N60P3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXFA)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220 (IXFP)  
TJ = 25C to 150C  
600  
600  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
D (Tab)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
16  
40  
A
A
TO-247 (IXFH)  
IA  
TC = 25C  
TC = 25C  
8
A
EAS  
800  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
35  
V/ns  
W
G
D
D (Tab)  
S
347  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Fast Intrinsic Rectifier  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
3.0  
5.0  
Applications  
100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
25 A  
1.5 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
470 m  
DS100419C(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

与IXFA16N60P3相关器件

型号 品牌 获取价格 描述 数据表
IXFA180N10T2 IXYS

获取价格

TrenchT2 HiperFET Power MOSFET
IXFA180N10T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXFA180N10T2-TRL IXYS

获取价格

Power Field-Effect Transistor,
IXFA18N60X LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFA18N60X IXYS

获取价格

Power Field-Effect Transistor,
IXFA18N65X2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFA20N50P3 IXYS

获取价格

Power MOSFET
IXFA20N50P3 LITTELFUSE

获取价格

PolarP3? HiPerFET?产品系列是针对300V, 500V至600V产品系列的
IXFA20N50P3_V01 IXYS

获取价格

Power MOSFET
IXFA20N85XHV LITTELFUSE

获取价格

采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件,具有业内最低的导通