Datasheet > IRLMS1503PBF-1_15

IRLMS1503PBF-1_15

更新时间： 2024-11-19 01:16:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	197K
描述
Compatible with Existing Surface Mount Techniques

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLMS1503PBF-1_15 数据手册

浏览型号IRLMS1503PBF-1_15的Datasheet PDF文件第2页

浏览型号IRLMS1503PBF-1_15的Datasheet PDF文件第3页

浏览型号IRLMS1503PBF-1_15的Datasheet PDF文件第4页

浏览型号IRLMS1503PBF-1_15的Datasheet PDF文件第5页

浏览型号IRLMS1503PBF-1_15的Datasheet PDF文件第6页

IRLMS1503PbF-1

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

I_D

0.10

0.20

6.4

Micro6™

Top View

3.2

(@T_A= 25°C)

Features

Benefits

Industry-standard pinout Micro-6 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Base Part Number

Package Type

Micro6

Orderable Part Number

IRLMS1503TRPbF-1

Form

Quantity

IRLMS1503TRPbF-1

Tape and Reel

3000

™

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

3.2

2.6

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

P_D@T_A= 25°C

Power Dissipation

1.7

mW/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

± 20

5.0

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

V/ns

°C

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance Ratings

Parameter

Min.

Typ.

Max

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

Submit Datasheet Feedback

June 30, 2014

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRLMS1503PBF-1_15相关器件

型号	品牌	获取价格	描述	数据表
IRLMS1503TRHR	INFINEON	获取价格	Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
IRLMS1503TRPBF	INFINEON	获取价格	Generation V Technology
IRLMS1902	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS1902PBF	INFINEON	获取价格	暂无描述
IRLMS1902TR	INFINEON	获取价格	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
IRLMS1902TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
IRLMS2002	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS2002PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS2002TR	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Met
IRLMS2002TRPBF	INFINEON	获取价格	Ultra Low On-Resistance