Datasheet > IRLP2505

IRLP2505

更新时间： 2024-11-17 23:59:43

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IRLP2505 数据手册

PD - _____

IRLP2505

PRELIMINARY

HEXFET^®Power MOSFET

Logic-Level Gate Drive

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

V_DSS= 55V

R_DS(on)= 0.008Ω

I_D= 90A

Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

360

150

1.0

±20

500

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

2.9

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

––––

Typ.

––––

0.24

Max.

Units

R_θJC

R_θCS

R_θJA

1.0

––––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

°C/W

––––

8/4/95

12 3 4 5 6 7 8

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