Datasheet > IRLR014NTRRPBF

IRLR014NTRRPBF

更新时间： 2024-09-17 09:51:15

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	287K
描述
Power Field-Effect Transistor, 10A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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IRLR014NTRRPBF 数据手册

PD - 95551B

IRLR014NPbF

IRLU014NPbF

HEXFET^®Power MOSFET

l Logic-LevelGateDrive

l SurfaceMount(IRLR024N)

l StraightLead(IRLU024N)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

V_DSS= 55V

R_DS(on)= 0.14Ω

I_D= 10A

Description

FifthGenerationHEXFETsfromInternationalRectifierutilize

advanced processing techniques to achieve the lowest

possible on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

D-Pak

I-Pak

IRLR014NPbF IRLU014NPbF

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

_D@ T_C= 100°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

7.1

I_DM

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.2

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 16

Single Pulse Avalanche Energy

Avalanche Current

6.0

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

2.8

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Case-to-Ambient (PCB mount)**

Junction-to-Ambient

Typ.

–––

Max.

5.3

Units

R_θJC

R_θJA

°C/W

110

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

10/01/10

12 3 4 5 6 7...10

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