Datasheet > IRLR/U3410

IRLR/U3410

更新时间： 2024-09-14 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	160K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLR/U3410 数据手册

PD - 91607B

IRLR/U3410

HEXFET^®Power MOSFET

l Logic Level Gate Drive

l Ultra Low On-Resistance

l Surface Mount (IRLR3410)

l Straight Lead (IRLU3410)

l Advanced Process Technology

l Fast Switching

V_DSS= 100V

R_DS(on)= 0.105Ω

I_D= 17A

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

D -PAK

TO -252AA

I-PAK

TO -251AA

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current ꢀ

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.53

± 16

150

9.0

7.9

5.0

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Currentꢀ

E_AR

dv/dt

T_J

Repetitive Avalanche Energyꢀ

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.9

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

R_θJA

110

www.irf.com

5/11/98

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRLR/U3410相关器件

型号	品牌	获取价格	描述	数据表
IRLR010	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 6.7A I(D) \| TO-252
IRLR014	INFINEON	获取价格	HEXFET POWER MOSFET
IRLR014	VISHAY	获取价格	Power MOSFET
IRLR014	SAMSUNG	获取价格	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
IRLR014, IRLU014, SiHLR014, SiHLU014	VISHAY	获取价格	Power MOSFET
IRLR014_10	VISHAY	获取价格	Power MOSFET
IRLR014A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 8.2A I(D) \| TO-252AA
IRLR014N	INFINEON	获取价格	HEXFET Power MOSFET
IRLR014NPBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) =
IRLR014NTR	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Meta