IRLR014N

更新时间： 2024-11-05 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
10页	113K
描述
HEXFET Power MOSFET

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IRLR014N 数据手册

PD- 94350

IRLR/U014N

HEXFET^®Power MOSFET

ꢀ Logic-Level Gate Drive

ꢀ Surface Mount (IRLR024N)

ꢀ Straight Lead (IRLU024N)

ꢀ Advanced Process Technology

ꢀ Fast Switching

V_DSS= 55V

_DS(on)= 0.14Ω

ꢀ Fully Avalanche Rated

I_D= 10A

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient device for use in a wide

variety of applications.

D-Pak

TO-252AA

I-Pak

TO-251AA

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

_D@ T_C= 100°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current ꢁ

7.1

I_DM

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.2

± 16

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢂ

Avalanche Currentꢁ

6.0

2.8

5.0

E_AR

dv/dt

T_J

Repetitive Avalanche Energyꢁ

Peak Diode Recovery dv/dt ꢃ

Operating Junction and

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

5.3

Units

R_θJC

R_θJA

Case-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

5/4/99

12 3 4 5 6 7...10

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