Datasheet > IRLR/U2905

IRLR/U2905

更新时间： 2024-09-14 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	136K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLR/U2905 数据手册

PD- 91334E

IRLR/U2905

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Ultra Low On-Resistance

l Surface Mount (IRLR2905)

l Straight Lead (IRLU2905)

l Advanced Process Technology

l Fast Switching

V_DSS= 55V

R_DS(on)= 0.027Ω

I_D= 42Aꢀ

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient device for use in a wide

variety of applications.

D-Pak

T O -252AA

I-Pak

TO -251AA

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

42 ꢀ

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

160

110

0.71

± 16

210

P_D@T_C= 25°C

PowerDissipation

W/°C

LinearDeratingFactor

V_GS

E_AS

I_AR

Gate-to-SourceVoltage

Single Pulse Avalanche Energy

AvalancheCurrent

E_AR

dv/dt

T_J

RepetitiveAvalancheEnergy

Peak Diode Recovery dv/dt

OperatingJunctionand

V/ns

5.0

-55 to + 175

T_STG

StorageTemperatureRange

SolderingTemperature, for10seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.4

Units

R_θJC

R_θJA

Case-to-Ambient(PCBmount)**

Junction-to-Ambient

–––

°C/W

–––

110

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

12/8/00

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRLR/U2905相关器件

型号	品牌	获取价格	描述	数据表
IRLR/U3303	INFINEON	获取价格	Power MOSFET
IRLR/U3410	INFINEON	获取价格	HEXFET Power MOSFET
IRLR010	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 6.7A I(D) \| TO-252
IRLR014	INFINEON	获取价格	HEXFET POWER MOSFET
IRLR014	VISHAY	获取价格	Power MOSFET
IRLR014	SAMSUNG	获取价格	Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
IRLR014, IRLU014, SiHLR014, SiHLU014	VISHAY	获取价格	Power MOSFET
IRLR014_10	VISHAY	获取价格	Power MOSFET
IRLR014A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 8.2A I(D) \| TO-252AA
IRLR014N	INFINEON	获取价格	HEXFET Power MOSFET