Datasheet > IRLMS4502

IRLMS4502

更新时间： 2024-11-17 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	96K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRLMS4502 数据手册

PD- 93759B

IRLMS4502

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

V_DSS= -12V

l Available in Tape & Reel

R_DS(on)= 0.042Ω

Top View

Description

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications..

The Micro6 package with its customized leadframe

produces a HEXFET power MOSFET with Rds(on) 60%

less than a similar size SOT-23. This package is ideal for

applications where printed circuit board space is at a

premium. It'suniquethermaldesignandR_DS(on)reduction

enables a current-handling increase of nearly 300%

compared to the SOT-23.

Micro6ä

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-12

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-5.5

-4.4

-44

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.7

Power Dissipation

1.1

Linear Derating Factor

0.013

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 12

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

01/13/03

12 3 4 5 6 7

中文翻译

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